The study of communication fibre amplifier based on doped nano-scale semiconductor materials

The study of communication fibre amplifier based on doped nano-scale semiconductor materials

Yanru Xue, Yinghua Yao, Min Liu, Feng Wang 

Hebei Normal University of Science & Technology, Hebei, 066004, China

This paper firstly describes the development of communication fibre with InP-doped nano-scale semiconductor materials in detail, and then discusses its important dispersion characteristics, starting from the definition of fibre materials dispersion to explore the affected factors of dispersion, different dispersions on fibre as well as the dispersion features of single mode fibre. From the perspectives of experimental and theoretical calculations, it analyses the dispersion characteristics of drawing and doped nano-scale fibre. Thus, it will have much broader prospects for sano-scale semiconductor materials as doping fibre amplifier in communication.