The hysteresis characteristics of a sensor with sensing memory function and linearization
Xin-liang Cao, Wei Cui, Xin-cheng Ren
COMPUTER MODELLING & NEW TECHNOLOGIES 2014 18(12D) 211-215
School of Physics and Electronics Information, Yan’an University, Yan’an 716000, China
With the emergence of a memristor, a new opportunity has been brought for further development of electronic information technology. The new memory devices with a self-contraction of hysteretic behaviour, as a sensor, it is usually required linearization, but the linearization result would make sensor to loss the memory function. In the study, the general character of memory sensor is summarized based on the characteristic analysis of a new analog memory device. And, as memristor to an example, according to the duality between the different types of devices, the linearization method is proposed for keeping memory. By theoretical analysis, the conditioning networks of linearization memristor sensor would be not only established a one-to-one correspondence relationship between the input and output of sensor, but also marked the history state of the memristor.